Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-...

Full description

Bibliographic Details
Main Authors: Vladimir V. Fedorov, Yury Berdnikov, Nickolay V. Sibirev, Alexey D. Bolshakov, Sergey V. Fedina, Georgiy A. Sapunov, Liliia N. Dvoretckaia, George Cirlin, Demid A. Kirilenko, Maria Tchernycheva, Ivan S. Mukhin
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Nanomaterials
Subjects:
GaP
nanowires
molecular beam epitaxy
two-stage growth
Online Access:https://www.mdpi.com/2079-4991/11/8/1949

Internet

https://www.mdpi.com/2079-4991/11/8/1949

Similar Items