Ultrasound influence on the electrical activity of radiation defects in γ-irradiated n-type silicon crystals
The effect of the ultrasonic (US) processing in regime (fUS = 8 МГц, WUS = 2 Вт/см2 , t ≈ 104 с) on the transformation of radiation defects (RDs) in γ-irradiated (D = 108 and 109 rad) in Chochralski-grown n-type silicon single crystals (9,5 · 1017 см-3) has been studied. The changes of the te...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2007-03-01
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| Series: | Âderna Fìzika ta Energetika |
| Online Access: | http://jnpae.kinr.kiev.ua/19(1)/Articles_PDF/jnpae-2007-1(19)-0095-Babych.pdf |