Electrical Performance and Stability Improvement of p-Channel SnO Thin-Film Transistors Using Atomic-Layer-Deposited Al₂O₃ Capping Layer
The incorporation of an atomic-layer-deposited Al<sub>2</sub>O<sub>3</sub> capping layer was proposed as an effective method to enhance the electrical performance and stability of p-channel SnO thin-film transistors (TFTs). The SnO TFT with the Al<sub>2</sub>O<...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9290078/ |