Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy
In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth par...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Beilstein-Institut
2018-01-01
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Series: | Beilstein Journal of Nanotechnology |
Subjects: | |
Online Access: | https://doi.org/10.3762/bjnano.9.17 |