High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma
Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal proces...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-08-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4961447 |