Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers
This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epit...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2019-10-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/12/20/3362 |