Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epit...

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Bibliographic Details
Main Authors: Cristiano Calabretta, Marta Agati, Massimo Zimbone, Simona Boninelli, Andrea Castiello, Alessandro Pecora, Guglielmo Fortunato, Lucia Calcagno, Lorenzo Torrisi, Francesco La Via
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Materials
Subjects:
laser annealing
sic
ion implantation
phosphorus
aluminum
raman
photoluminescence
tem
point defects
metal oxide semiconductor field effect transistor (mosfet)
Online Access:https://www.mdpi.com/1996-1944/12/20/3362

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https://www.mdpi.com/1996-1944/12/20/3362

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