Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Abstracts High-k metal oxide films are vital for the future development of microelectronics technology. In this work, ZrO2 films were grown on silicon by atomic layer deposition (ALD) using tetrakis(dimethylamido)zirconium and ozone as precursors. The relatively constant deposition rate of 0.125 nm/...

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Bibliographic Details
Main Authors: Junqing Liu, Junpeng Li, Jianzhuo Wu, Jiaming Sun
Format: Article
Language:English
Published: SpringerOpen 2019-05-01
Series:Nanoscale Research Letters
Subjects:
Atomic layer deposition
ZrO2
Electrical property
Thermal annealing
Online Access:http://link.springer.com/article/10.1186/s11671-019-2989-8

Internet

http://link.springer.com/article/10.1186/s11671-019-2989-8

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