Structural, Optical and Electrical Properties of HfO<sub>2</sub> Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition
HfO<sub>2</sub> was deposited at 80–250 °C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth per cycle (GPC) is constant, shifted f...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-04-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/13/9/2008 |