Transistor Switches Using Active Piezoelectric Gate Barriers

Transistor Switches Using Active Piezoelectric Gate Barriers

This paper explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an electromechanical capacitor resulting in a negative capacitance....

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Bibliographic Details
Main Authors: Raj K. Jana, Arvind Ajoy, Gregory Snider, Debdeep Jena
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
Electrostriction
Electromechanical capacitor
Piezoelectric barrier
Negative capacitance
PiezoFET
, Subthreshold slope
Online Access:https://ieeexplore.ieee.org/document/7130571/

Internet

https://ieeexplore.ieee.org/document/7130571/

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