A Novel Built-In Self-Repair Scheme for 3D Memory
Three-dimensional (3D) memory products based on through silicon via (TSV) are widely developed to fulfill the ever-increasing demands of per unit area storage capacity. The yield is still one of the critical challenges for 3D memory. Redundancy technique is now widely used in industry to improve yie...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8717999/ |