A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm

Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstr...

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Bibliographic Details
Main Authors: Junjie Li, Yongliang Li, Na Zhou, Guilei Wang, Qingzhu Zhang, Anyan Du, Yongkui Zhang, Jianfeng Gao, Zhenzhen Kong, Hongxiao Lin, Jinjuan Xiang, Chen Li, Xiaogen Yin, Yangyang Li, Xiaolei Wang, Hong Yang, Xueli Ma, Jianghao Han, Jing Zhang, Tairan Hu, Tao Yang, Junfeng Li, Huaxiang Yin, Huilong Zhu, Wenwu Wang, Henry H. Radamson
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Materials
Subjects:
vertical nanopillar
atomic layer etching
sige
field effect transistor
nano device
sensor material
Online Access:https://www.mdpi.com/1996-1944/13/3/771

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https://www.mdpi.com/1996-1944/13/3/771

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