Diagnostics of deep centers on the border of film–substrate in thin-film all-epitaxial structures of GaAs
A simple method for the determination of the concentration of vacant deep traps in the vicinity of the «film — substrate» interface is proposed. The method is based on determining the increase in the width of the conducting channel under extrinsic illumination from the shift of the inflection point...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2010-08-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2010/4_2010/pdf/10.zip |