Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the...

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Bibliographic Details
Main Authors: Ying Yu, Mifeng Li, Jifang He, Wendong Zhang, Jun Tang, Jun Liu, Zhichuan Niu, Chenyang Xue, Hao Guo, Haiqiao Ni, Yunbo Shi
Format: Article
Language:English
Published: MDPI AG 2012-12-01
Series:Materials
Subjects:
residual stress
GaAs-on-Si
MEMS sensors
Online Access:http://www.mdpi.com/1996-1944/5/12/2917

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http://www.mdpi.com/1996-1944/5/12/2917

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