Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application
Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the...
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doaj-6f1cae1b25b94cdaab029afe8735a29e2020-11-24T23:04:59ZengMDPI AGMaterials1996-19442012-12-015122917292610.3390/ma5122917Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor ApplicationYing YuMifeng LiJifang HeWendong ZhangJun TangJun LiuZhichuan NiuChenyang XueHao GuoHaiqiao NiYunbo ShiResonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlattice were used, and the surface defect density can be improved by two orders of magnitude. Combing with the Raman spectrum, the residual stress was characterized, and it can be concluded from the experimental results that the residual stress can be reduced by 50%, in comparison with the original substrate. This method gives us a solution to optimize the epitaxy GaAs layers on Si substrate, which will also optimize our future process of integration RTD and HEMT based on GaAs on Si substrate for the MEMS sensor applications.http://www.mdpi.com/1996-1944/5/12/2917residual stressGaAs-on-SiMEMS sensors |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Ying Yu Mifeng Li Jifang He Wendong Zhang Jun Tang Jun Liu Zhichuan Niu Chenyang Xue Hao Guo Haiqiao Ni Yunbo Shi |
spellingShingle |
Ying Yu Mifeng Li Jifang He Wendong Zhang Jun Tang Jun Liu Zhichuan Niu Chenyang Xue Hao Guo Haiqiao Ni Yunbo Shi Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application Materials residual stress GaAs-on-Si MEMS sensors |
author_facet |
Ying Yu Mifeng Li Jifang He Wendong Zhang Jun Tang Jun Liu Zhichuan Niu Chenyang Xue Hao Guo Haiqiao Ni Yunbo Shi |
author_sort |
Ying Yu |
title |
Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application |
title_short |
Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application |
title_full |
Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application |
title_fullStr |
Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application |
title_full_unstemmed |
Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application |
title_sort |
optimization of the gaas-on-si substrate for microelectromechanical systems (mems) sensor application |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2012-12-01 |
description |
Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlattice were used, and the surface defect density can be improved by two orders of magnitude. Combing with the Raman spectrum, the residual stress was characterized, and it can be concluded from the experimental results that the residual stress can be reduced by 50%, in comparison with the original substrate. This method gives us a solution to optimize the epitaxy GaAs layers on Si substrate, which will also optimize our future process of integration RTD and HEMT based on GaAs on Si substrate for the MEMS sensor applications. |
topic |
residual stress GaAs-on-Si MEMS sensors |
url |
http://www.mdpi.com/1996-1944/5/12/2917 |
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