Defect concentration in clusters, created by fast-pile neutrons in n-Si (FZ, Cz)
The dependence of concentration of defects on doping level for average cluster in n-Si was calculated. It was shown that in the framework of the Gossick's model the concentration of defects for the average cluster is in inverse proportion to the square of a cluster radius. One obtains the size...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2007-12-01
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| Series: | Âderna Fìzika ta Energetika |
| Online Access: | http://jnpae.kinr.kiev.ua/22(4)/Articles_PDF/jnpae-2007-4(22)-0089-Dolgolenko.pdf |