Capacitance-voltage measurements in GaAs thin-film epitaxial structures
It is shown that capacitance–voltage characteristics that feature steeply dropping regions, in particular those of GaAs thin-film structures, may be measured at moderately small amplitudes of the measuring ac voltage (of the order of 100 mV) at the expense of taking measurements at two different amp...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
Politehperiodika
2009-10-01
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Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
Subjects: | |
Online Access: | http://www.tkea.com.ua/tkea/2009/5_2009/pdf/07.zip |