Capacitance-voltage measurements in GaAs thin-film epitaxial structures

Capacitance-voltage measurements in GaAs thin-film epitaxial structures

It is shown that capacitance–voltage characteristics that feature steeply dropping regions, in particular those of GaAs thin-film structures, may be measured at moderately small amplitudes of the measuring ac voltage (of the order of 100 mV) at the expense of taking measurements at two different amp...

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Bibliographic Details
Main Authors: Gorev N. B., Kodzhespirova I. F., Privalov E. N.
Format: Article
Language:English
Published: Politehperiodika 2009-10-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
gallium arsenide
epitaxial structure
Schottky barrier
current-voltage characteristics
deep trapping centers
Online Access:http://www.tkea.com.ua/tkea/2009/5_2009/pdf/07.zip
Description
Summary:It is shown that capacitance–voltage characteristics that feature steeply dropping regions, in particular those of GaAs thin-film structures, may be measured at moderately small amplitudes of the measuring ac voltage (of the order of 100 mV) at the expense of taking measurements at two different amplitudes. This conclusion is confirmed by the results of numerical calculation of the apparent capacitance of GaAs epitaxial structures.
ISSN:2225-5818

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