The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method

The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method

For the first time, Cu-Al-O films were grown using the reactive ion beam sputtering at temperatures ranging from 80 to 380 °C in 50 °C increments. Correlations between the properties of as-grown films measured by X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy, Fouri...

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Bibliographic Details
Main Authors: A.I. Ievtushenko, M.G. Dusheyko, V.A. Karpyna, O.I. Bykov, P.M. Lytvyn, O.I. Olifan, V.A. Levchenko, A.A. Korchovyi, S.P. Starik, S.V. Tkach, G.V. Lashkarev
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2017-10-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
Cu-Al-O films
XRD
optic properties
FTIR
morphology
Online Access:http://journal-spqeo.org.ua/n3_2017/P314-318abstr.html

Internet

http://journal-spqeo.org.ua/n3_2017/P314-318abstr.html

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