Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering
We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5008913 |