Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

Abstract Vertical gate-all-around field-effect transistors (vGAAFETs) are considered as the potential candidates to replace FinFETs for advanced integrated circuit manufacturing technology at/beyond 3-nm technology node. A multilayer (ML) of Si/SiGe/Si is commonly grown and processed to form vertica...

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Bibliographic Details
Main Authors: Chen Li, Hongxiao Lin, Junjie Li, Xiaogen Yin, Yongkui Zhang, Zhenzhen Kong, Guilei Wang, Huilong Zhu, Henry H. Radamson
Format: Article
Language:English
Published: SpringerOpen 2020-12-01
Series:Nanoscale Research Letters
Subjects:
Phosphorus-doped silicon
SiGe
RPCVD
Dopant segregation
Auto-doping
Selective etch
Online Access:https://doi.org/10.1186/s11671-020-03456-0

Internet

https://doi.org/10.1186/s11671-020-03456-0

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