Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface

Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface

We investigated the relationship between the band-offset, the gate leakage current, and the interface states density on SiO2/4H-SiC (000-1) structures via hard x-ray photoelectron spectroscopy and electrical measurements. From the observed band-offset, we found that conduction band offset (ΔEc) depe...

Full description

Bibliographic Details
Main Authors: Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Takahiro Nagata, Shigenori Ueda, Kikuo Yamabe
Format: Article
Language:English
Published: AIP Publishing LLC 2019-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5088541

Internet

http://dx.doi.org/10.1063/1.5088541

Similar Items