Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface
We investigated the relationship between the band-offset, the gate leakage current, and the interface states density on SiO2/4H-SiC (000-1) structures via hard x-ray photoelectron spectroscopy and electrical measurements. From the observed band-offset, we found that conduction band offset (ΔEc) depe...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2019-04-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5088541 |