High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering
We have grown Mg-doped GaN films with low residual hydrogen concentration using a low-temperature pulsed sputtering deposition (PSD) process. The growth system is inherently hydrogen-free, allowing us to obtain high-purity Mg-doped GaN films with residual hydrogen concentrations below 5 × 1016 cm−3,...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-08-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4960485 |