Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Abstract Inefficient Mg-induced p-type doping has been remained a major obstacle in the development of GaN-based electronic devices for solid-state lighting and power applications. This study reports comparative structural analysis of defects in GaN layers on freestanding GaN substrates where Mg inc...

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Bibliographic Details
Main Authors: Ashutosh Kumar, Kazutaka Mitsuishi, Toru Hara, Koji Kimoto, Yoshihiro Irokawa, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Yasuo Koide
Format: Article
Language:English
Published: SpringerOpen 2018-12-01
Series:Nanoscale Research Letters
Subjects:
GaN
STEM
SIMS
Pyramidal defects
Line defects
Online Access:http://link.springer.com/article/10.1186/s11671-018-2804-y

Internet

http://link.springer.com/article/10.1186/s11671-018-2804-y

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