Growth of InN ultrathin films on AlN for the application to field-effect transistors
Herein, we report the growth method of ultrathin indium nitride (InN) films on aluminum nitride (AlN) templates by sputtering and its application to field-effect transistors (FETs). Although island-like InN surfaces were formed at the initial film growth stage, the height of the islands on the surfa...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0035203 |