Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics
We report the impact of carbon nanotube (CNT) buried layer in the middle of 7 μm polyimide (PI) substrate on the electrical performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) by repetitive mechanical stretching. TFT arrays on 3 mm × 3 mm PI...
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doaj-a0ffccc94b2d4153b2cc3881fb22edb02021-04-05T16:57:40ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-01780180710.1109/JEDS.2019.29210188733897Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable ElectronicsMd Mehedi Hasan0https://orcid.org/0000-0001-9030-8209Mohammad Masum Billah1https://orcid.org/0000-0001-7895-5948Xiuling Li2https://orcid.org/0000-0003-4600-2362Jin Jang3https://orcid.org/0000-0002-7572-5669Department of Information Display, Advanced Display Research Center, Kyung Hee University, Seoul, South KoreaDepartment of Information Display, Advanced Display Research Center, Kyung Hee University, Seoul, South KoreaDepartment of Information Display, Advanced Display Research Center, Kyung Hee University, Seoul, South KoreaDepartment of Information Display, Advanced Display Research Center, Kyung Hee University, Seoul, South KoreaWe report the impact of carbon nanotube (CNT) buried layer in the middle of 7 μm polyimide (PI) substrate on the electrical performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) by repetitive mechanical stretching. TFT arrays on 3 mm × 3 mm PI layers were attached on 40 μm polydimethylsiloxane (PDMS) substrate by double-sided PI tape. A negative threshold voltage shift (ΔV<sub>Th</sub>(V)) of -3 V has been found under 70% mechanical stretching for the TFTs on the conventional PI substrate, whereas the TFTs with CNT layer inside PI substrate exhibited robust TFT performance. The fabricated oxide TFTs reported here with CNT inside PI substrate shows field effect mobility (μ<sub>FE</sub>) ~ 14 cm<sup>2</sup>/V·s at pristine state, and changed <;5% after repetitive mechanical stretching and bending which might be attributed from the strain absorbing CNT layer inside PI substrate using TCAD simulation.https://ieeexplore.ieee.org/document/8733897/<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTsburied layerstretchingtensile bendingPI substrateTCAD |
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DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Md Mehedi Hasan Mohammad Masum Billah Xiuling Li Jin Jang |
spellingShingle |
Md Mehedi Hasan Mohammad Masum Billah Xiuling Li Jin Jang Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics IEEE Journal of the Electron Devices Society <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTs buried layer stretching tensile bending PI substrate TCAD |
author_facet |
Md Mehedi Hasan Mohammad Masum Billah Xiuling Li Jin Jang |
author_sort |
Md Mehedi Hasan |
title |
Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics |
title_short |
Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics |
title_full |
Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics |
title_fullStr |
Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics |
title_full_unstemmed |
Robust Oxide Thin-Film Transistors With Embedded CNT Buried Layer for Stretchable Electronics |
title_sort |
robust oxide thin-film transistors with embedded cnt buried layer for stretchable electronics |
publisher |
IEEE |
series |
IEEE Journal of the Electron Devices Society |
issn |
2168-6734 |
publishDate |
2019-01-01 |
description |
We report the impact of carbon nanotube (CNT) buried layer in the middle of 7 μm polyimide (PI) substrate on the electrical performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) by repetitive mechanical stretching. TFT arrays on 3 mm × 3 mm PI layers were attached on 40 μm polydimethylsiloxane (PDMS) substrate by double-sided PI tape. A negative threshold voltage shift (ΔV<sub>Th</sub>(V)) of -3 V has been found under 70% mechanical stretching for the TFTs on the conventional PI substrate, whereas the TFTs with CNT layer inside PI substrate exhibited robust TFT performance. The fabricated oxide TFTs reported here with CNT inside PI substrate shows field effect mobility (μ<sub>FE</sub>) ~ 14 cm<sup>2</sup>/V·s at pristine state, and changed <;5% after repetitive mechanical stretching and bending which might be attributed from the strain absorbing CNT layer inside PI substrate using TCAD simulation. |
topic |
<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">a</italic>-IGZO TFTs buried layer stretching tensile bending PI substrate TCAD |
url |
https://ieeexplore.ieee.org/document/8733897/ |
work_keys_str_mv |
AT mdmehedihasan robustoxidethinfilmtransistorswithembeddedcntburiedlayerforstretchableelectronics AT mohammadmasumbillah robustoxidethinfilmtransistorswithembeddedcntburiedlayerforstretchableelectronics AT xiulingli robustoxidethinfilmtransistorswithembeddedcntburiedlayerforstretchableelectronics AT jinjang robustoxidethinfilmtransistorswithembeddedcntburiedlayerforstretchableelectronics |
_version_ |
1721540629175992320 |