Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics

The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio frequency (RF) power, ratio of mixed gas, flow ra...

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Bibliographic Details
Main Authors: Yue Sun, Xuanwu Kang, Yingkui Zheng, Ke Wei, Pengfei Li, Wenbo Wang, Xinyu Liu, Guoqi Zhang
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Nanomaterials
Subjects:
GaN
inductively coupled plasma (ICP)
mesa
sidewall profile
quasi-vertical
Schottky barrier diode (SBD)
Online Access:https://www.mdpi.com/2079-4991/10/4/657

Internet

https://www.mdpi.com/2079-4991/10/4/657

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