Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier

Reliability-Tolerant Design for Ultra-Thin-Body GeOI 6T SRAM Cell and Sense Amplifier

This paper investigates the reliability-tolerant design for ultra-thin-body (UTB) GeOI 6T SRAM cell and sense amplifiers. For UTB GeOI 6T SRAM cells, using high threshold voltage design significantly mitigates the read and hold static noise margin degradations due to NBTI and PBTI. Due to worse PBTI...

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Bibliographic Details
Main Author: Vita Pi-Ho Hu
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Reliability-tolerant
ultra-thin-body (UTB)
GeOI
NBTI
PBTI
SRAM
Online Access:https://ieeexplore.ieee.org/document/7797165/

Internet

https://ieeexplore.ieee.org/document/7797165/

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