Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques

Materials Relevant to Realizing a Field-Effect Transistor Based on Spin–Orbit Torques

Spin-orbit torque (SOT) is a promising mechanism for writing magnetic memories, while field-effect transistors (FETs) are the gold-standard device for logic operation. The spin-orbit torque field-effect transistor (SOTFET) is a proposed device that couples an SOT-controlled ferromagnet to a semicond...

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Bibliographic Details
Main Authors: Phillip Dang, Zexuan Zhang, Joseph Casamento, Xiang Li, Jashan Singhal, Darrell G. Schlom, Daniel C. Ralph, Huili Grace Xing, Debdeep Jena
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
Field-effect transistors (FETs)
magnetic materials
magnetoelectrics
multiferroics (MFs)
spin–orbit torques (SOTs)
spintronics
Online Access:https://ieeexplore.ieee.org/document/8938696/

Internet

https://ieeexplore.ieee.org/document/8938696/

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