High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrat...

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Bibliographic Details
Main Authors: Xuewei Zhao, Guilei Wang, Hongxiao Lin, Yong Du, Xue Luo, Zhenzhen Kong, Jiale Su, Junjie Li, Wenjuan Xiong, Yuanhao Miao, Haiou Li, Guoping Guo, Henry H. Radamson
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Nanomaterials
Subjects:
GOI
photodetectors
dark current
responsivity
Online Access:https://www.mdpi.com/2079-4991/11/5/1125

Internet

https://www.mdpi.com/2079-4991/11/5/1125

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