Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al<sub>2</sub>O<sub>3</sub> Gate Dielectrics

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al<sub>2</sub>O<sub>3</sub> Gate Dielectrics

A normally-off GaN double-implanted vertical MOSFET (DMOSFET) with an atomic layer deposition (ALD)-Al<sub>2</sub>O<sub>3</sub> gate dielectric film on a free-standing GaN substrate fabricated by triple ion implantation is presented. The DMOSFET was formed with Si ion implant...

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Bibliographic Details
Main Authors: Michitaka Yoshino, Yuto Ando, Manato Deki, Toru Toyabe, Kazuo Kuriyama, Yoshio Honda, Tomoaki Nishimura, Hiroshi Amano, Tetsu Kachi, Tohru Nakamura
Format: Article
Language:English
Published: MDPI AG 2019-02-01
Series:Materials
Subjects:
GaN
ion implantation
Mg
MOSFET
Si
Online Access:https://www.mdpi.com/1996-1944/12/5/689

Internet

https://www.mdpi.com/1996-1944/12/5/689

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