Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe Source/Drain

Investigation of Low-Frequency Noise Characterization of 28-nm High-k pMOSFET with Embedded SiGe Source/Drain

We have studied the low-frequency noise characterizations in 28-nm high-k (HK) pMOSFET with embedded SiGe source/drain (S/D) through 1/f  noise and random telegraph noise measurements simultaneously. It is found that uniaxial compressive strain really existed in HK pMOSFET with embedded SiGe S/D. Th...

Full description

Bibliographic Details
Main Authors: Shih-Chang Tsai, San-Lein Wu, Jone-Fang Chen, Bo-Chin Wang, Po Chin Huang, Kai-Shiang Tsai, Tsung-Hsien Kao, Chih-Wei Yang, Cheng-Guo Chen, Kun-Yuan Lo, Osbert Cheng, Yean-Kuen Fang
Format: Article
Language:English
Published: Hindawi Limited 2014-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2014/787132

Internet

http://dx.doi.org/10.1155/2014/787132

Similar Items