Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches

Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches

We report on ammonia and plasma-assisted molecular beam epitaxy (NH3-MBE and PAMBE) grown GaN layers with a low net carrier concentration (Nnet). Growth parameters, such as growth rate, V–III ratio, and plasma power, were investigated on different substrates to study their impact on surface morpholo...

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Bibliographic Details
Main Authors: Jianfeng Wang, Kelsey Fast Jorgensen, Esmat Farzana, Kai Shek Qwah, Morteza Monavarian, Zachary J. Biegler, Thomas Mates, James S. Speck
Format: Article
Language:English
Published: AIP Publishing LLC 2021-08-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0060154

Internet

http://dx.doi.org/10.1063/5.0060154

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