Self-Assembled Monolayers on Highly Porous Low-<i>k</i> Dielectrics by 3-Aminopropyltrimethoxysilane Treatment
Highly porous low-dielectric-constant (low-<i>k)</i> dielectric materials with a dielectric constant (<i>k</i>) less than 2.50 are needed for 32 nm and beyond technological nodes. In this study, a highly porous low-<i>k</i> dielectric film with a <i>k</i&...
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doaj-e0cf8f73b4194d48bee3ae52584484eb2020-11-24T22:19:07ZengMDPI AGCoatings2079-64122019-04-019424610.3390/coatings9040246coatings9040246Self-Assembled Monolayers on Highly Porous Low-<i>k</i> Dielectrics by 3-Aminopropyltrimethoxysilane TreatmentYi-Lung Cheng0Chiao-Wei Haung1Chih-Yen Lee2Giin-Shan Chen3Jau-Shiung Fang4Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, TaiwanDepartment of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, TaiwanDepartment of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, TaiwanDepartment of Materials Science and Engineering, Feng Chia University, Taichung 40724, TaiwanDepartment of Materials Science and Engineering, National Formosa University, Huwei 63201, TaiwanHighly porous low-dielectric-constant (low-<i>k)</i> dielectric materials with a dielectric constant (<i>k</i>) less than 2.50 are needed for 32 nm and beyond technological nodes. In this study, a highly porous low-<i>k</i> dielectric film with a <i>k</i> value of 2.25, open porosity of 32.0%, and pore diameter of 1.15 nm were treated by 3-Aminopropyltrimethoxysilane (APTMS) in wet solution in order to form self-assembled monolayers (SAMs) onto it. The effects of the formation SAMs on the electrical characteristics and reliability of highly porous low-<i>k</i> dielectric films were characterized. As SAMs were formed onto the highly porous low-<i>k</i> dielectric film by APTMS treatment, the dielectric breakdown field and the failure time were significantly improved, but at the expense of the increases in the dielectric constant and leakage current. Moreover, the formation SAMs enhanced the Cu barrier performance for highly porous low-<i>k</i> dielectric films. Therefore, the SAMs derived from APTMS treatment are promising for highly porous low-<i>k</i> dielectric films to ensure better integrity.https://www.mdpi.com/2079-6412/9/4/246low-dielectric-constantporous dielectricself-assembled monolayersCu barrierreliabilitytime-dependent-dielectric-breakdown |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yi-Lung Cheng Chiao-Wei Haung Chih-Yen Lee Giin-Shan Chen Jau-Shiung Fang |
spellingShingle |
Yi-Lung Cheng Chiao-Wei Haung Chih-Yen Lee Giin-Shan Chen Jau-Shiung Fang Self-Assembled Monolayers on Highly Porous Low-<i>k</i> Dielectrics by 3-Aminopropyltrimethoxysilane Treatment Coatings low-dielectric-constant porous dielectric self-assembled monolayers Cu barrier reliability time-dependent-dielectric-breakdown |
author_facet |
Yi-Lung Cheng Chiao-Wei Haung Chih-Yen Lee Giin-Shan Chen Jau-Shiung Fang |
author_sort |
Yi-Lung Cheng |
title |
Self-Assembled Monolayers on Highly Porous Low-<i>k</i> Dielectrics by 3-Aminopropyltrimethoxysilane Treatment |
title_short |
Self-Assembled Monolayers on Highly Porous Low-<i>k</i> Dielectrics by 3-Aminopropyltrimethoxysilane Treatment |
title_full |
Self-Assembled Monolayers on Highly Porous Low-<i>k</i> Dielectrics by 3-Aminopropyltrimethoxysilane Treatment |
title_fullStr |
Self-Assembled Monolayers on Highly Porous Low-<i>k</i> Dielectrics by 3-Aminopropyltrimethoxysilane Treatment |
title_full_unstemmed |
Self-Assembled Monolayers on Highly Porous Low-<i>k</i> Dielectrics by 3-Aminopropyltrimethoxysilane Treatment |
title_sort |
self-assembled monolayers on highly porous low-<i>k</i> dielectrics by 3-aminopropyltrimethoxysilane treatment |
publisher |
MDPI AG |
series |
Coatings |
issn |
2079-6412 |
publishDate |
2019-04-01 |
description |
Highly porous low-dielectric-constant (low-<i>k)</i> dielectric materials with a dielectric constant (<i>k</i>) less than 2.50 are needed for 32 nm and beyond technological nodes. In this study, a highly porous low-<i>k</i> dielectric film with a <i>k</i> value of 2.25, open porosity of 32.0%, and pore diameter of 1.15 nm were treated by 3-Aminopropyltrimethoxysilane (APTMS) in wet solution in order to form self-assembled monolayers (SAMs) onto it. The effects of the formation SAMs on the electrical characteristics and reliability of highly porous low-<i>k</i> dielectric films were characterized. As SAMs were formed onto the highly porous low-<i>k</i> dielectric film by APTMS treatment, the dielectric breakdown field and the failure time were significantly improved, but at the expense of the increases in the dielectric constant and leakage current. Moreover, the formation SAMs enhanced the Cu barrier performance for highly porous low-<i>k</i> dielectric films. Therefore, the SAMs derived from APTMS treatment are promising for highly porous low-<i>k</i> dielectric films to ensure better integrity. |
topic |
low-dielectric-constant porous dielectric self-assembled monolayers Cu barrier reliability time-dependent-dielectric-breakdown |
url |
https://www.mdpi.com/2079-6412/9/4/246 |
work_keys_str_mv |
AT yilungcheng selfassembledmonolayersonhighlyporouslowikidielectricsby3aminopropyltrimethoxysilanetreatment AT chiaoweihaung selfassembledmonolayersonhighlyporouslowikidielectricsby3aminopropyltrimethoxysilanetreatment AT chihyenlee selfassembledmonolayersonhighlyporouslowikidielectricsby3aminopropyltrimethoxysilanetreatment AT giinshanchen selfassembledmonolayersonhighlyporouslowikidielectricsby3aminopropyltrimethoxysilanetreatment AT jaushiungfang selfassembledmonolayersonhighlyporouslowikidielectricsby3aminopropyltrimethoxysilanetreatment |
_version_ |
1725780025282658304 |