Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation

Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation

Bibliographic Details
Main Authors: Bury Peter, Kobayashi Hikaru, Takahashi Masao, Imamura Kentaro, Sidor Peter, Černobila František
Format: Article
Language:English
Published: De Gruyter 2009-06-01
Series:Open Physics
Subjects:
mos structures
semiconductor-insulator interfaces
silicon dioxide
interface states
acoustic dlts
73
Online Access:https://doi.org/10.2478/s11534-009-0029-5

Internet

https://doi.org/10.2478/s11534-009-0029-5

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