Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD
We investigate low-temperature (<200 °C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p−n junctions. Compared to the standard diffusion or implantation processes, silicon growth at low temperature by PECVD ensures a lower thermal budget and a bette...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-11-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/12/22/3795 |