pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology

pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology

Abstract In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH4 and B2H6 precursors in 22 nm node CMOS technology were investigated. It is found that, in terms of threshold voltage, driving capability, carrier mobility, and the control of short-channel effects, the p...

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Bibliographic Details
Main Authors: Guilei Wang, Jun Luo, Jinbiao Liu, Tao Yang, Yefeng Xu, Junfeng Li, Huaxiang Yin, Jiang Yan, Huilong Zhu, Chao Zhao, Tianchun Ye, Henry H. Radamson
Format: Article
Language:English
Published: SpringerOpen 2017-04-01
Series:Nanoscale Research Letters
Subjects:
ALD W
High-k and metal gate (HKMG)
Nano-beam diffraction (NBD)
Threshold voltage (V t )
Mobility
Online Access:http://link.springer.com/article/10.1186/s11671-017-2080-2

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http://link.springer.com/article/10.1186/s11671-017-2080-2

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