Synthesis of large-area multilayer hexagonal boron nitride for high material performance

Synthesis of large-area multilayer hexagonal boron nitride for high material performance

Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized...

Full description

Bibliographic Details
Main Authors: Kim, Soo Min (Contributor), Hsu, Allen (Contributor), Park, Min Ho (Author), Chae, Sang Hoon (Author), Yun, Seok Joon (Author), Lee, Joo Song (Author), Cho, Dae-Hyun (Author), Fang, Wenjing (Contributor), Lee, Changgu (Author), Dresselhaus, Mildred (Contributor), Kim, Ki Kang (Author), Lee, Young Hee (Author), Kong, Jing (Contributor), Palacios, Tomas (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor)
Format: Article
Language:English
Published: Nature Publishing Group, 2016-01-13T16:25:06Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items