Synthesis of large-area multilayer hexagonal boron nitride for high material performance
Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized...
Main Authors: | Kim, Soo Min (Contributor), Hsu, Allen (Contributor), Park, Min Ho (Author), Chae, Sang Hoon (Author), Yun, Seok Joon (Author), Lee, Joo Song (Author), Cho, Dae-Hyun (Author), Fang, Wenjing (Contributor), Lee, Changgu (Author), Dresselhaus, Mildred (Contributor), Kim, Ki Kang (Author), Lee, Young Hee (Author), Kong, Jing (Contributor), Palacios, Tomas (Contributor) |
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Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor) |
Format: | Article |
Language: | English |
Published: |
Nature Publishing Group,
2016-01-13T16:25:06Z.
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Subjects: | |
Online Access: | Get fulltext |
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