Room-Temperature Ballistic Transport in III-Nitride Heterostructures
Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. However, their application to RT ballistic d...
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| Format: | Article |
| Language: | English |
| Published: |
American Chemical Society (ACS),
2016-05-24T23:26:25Z.
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| Subjects: | |
| Online Access: | Get fulltext |