High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radia...

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Bibliographic Details
Main Authors: Teng, J. H. (Author), Hou, Han Wei (Contributor), Liu, Zhihong (Contributor), Palacios, Tomas (Contributor), Chua, Soo-Jin (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: Nature Publishing Group, 2017-06-21T14:01:50Z.
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