Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application

Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application

This paper studies band-to-band tunneling in the transverse and lateral directions of van der Waals MoS₂/WSe₂ heterojunctions. We observe room-temperature negative differential resistance (NDR) in a heterojunction diode comprised of few-layer WSe₂ stacked on multilayer MoS₂. The presence of NDR is a...

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Bibliographic Details
Main Authors: Nourbakhsh, Amirhasan (Contributor), Zubair, Ahmad (Contributor), Dresselhaus, Mildred (Contributor), Palacios, Tomas (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: American Chemical Society (ACS), 2017-09-01T19:37:34Z.
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