Transport Properties of a MoS₂/WSe₂ Heterojunction Transistor and Its Potential for Application
This paper studies band-to-band tunneling in the transverse and lateral directions of van der Waals MoS₂/WSe₂ heterojunctions. We observe room-temperature negative differential resistance (NDR) in a heterojunction diode comprised of few-layer WSe₂ stacked on multilayer MoS₂. The presence of NDR is a...
Main Authors: | Nourbakhsh, Amirhasan (Contributor), Zubair, Ahmad (Contributor), Dresselhaus, Mildred (Contributor), Palacios, Tomas (Contributor) |
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Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor) |
Format: | Article |
Language: | English |
Published: |
American Chemical Society (ACS),
2017-09-01T19:37:34Z.
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Subjects: | |
Online Access: | Get fulltext |
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