Trench formation and corner rounding in vertical GaN power devices

Trench formation and corner rounding in vertical GaN power devices

Trench formation and corner rounding are the key processes to demonstrate high-voltage trenchbased vertical GaN devices. In this work, we developed a damage-free corner rounding technology combining Tetramethylammonium hydroxide wet etching and piranha clean. By optimizing the inductively coupled pl...

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Bibliographic Details
Main Authors: Liu, Zhihong (Author), Gao, Xiang (Author), Zhang, Yuhao (Contributor), Sun, Min (Contributor), Piedra, Daniel (Contributor), Hu, Jie (Contributor), Palacios, Tomas (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2018-06-04T17:24:01Z.
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