CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C)

CMOS-Compatible Ti/Al Ohmic Contacts (Rc < 0.3 Ω mm) for u-AlGaN/AlN/GaN HEMTs by Low Temperature Annealing (< 450 °C)

Recently the development of CMOS-compatible fabrication technologies for GaN HEMTs has attracted increasing levels of interest. A low temperature ohmic contact technology is required for gate-first device fabrication and CMOS-first GaN-Si integration process, however, typical ohmic contacts need ann...

Full description

Bibliographic Details
Main Authors: Liu, Zhihong (Author), Heuken, Michael (Author), Fahle, Dirk (Author), Ng, G. I. (Author), Palacios, Tomas (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Singapore-MIT Alliance in Research and Technology (SMART) (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2018-06-05T17:40:07Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items