Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes
This paper studies the key parameters affecting on-resistance and current crowding in quasi-vertical GaN power devices by experiment and simulation. The current distribution in the drift region, n⁻-GaN, was found to be mainly determined by the sheet resistance of the current spreading layer, n⁺-GaN....
| Main Authors: | , , , , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics (AIP),
2018-11-15T14:59:24Z.
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| Subjects: | |
| Online Access: | Get fulltext |