Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes
This paper studies the key parameters affecting on-resistance and current crowding in quasi-vertical GaN power devices by experiment and simulation. The current distribution in the drift region, n⁻-GaN, was found to be mainly determined by the sheet resistance of the current spreading layer, n⁺-GaN....
Main Authors: | Hennig, Jonas (Author), Dadgar, Armin (Author), Zhang, Yuhao (Contributor), Sun, Min (Contributor), Piedra, Daniel (Contributor), Palacios, Tomas (Contributor) |
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Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor) |
Format: | Article |
Language: | English |
Published: |
American Institute of Physics (AIP),
2018-11-15T14:59:24Z.
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Subjects: | |
Online Access: | Get fulltext |
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