Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure
The effect of a 2D graphene layer (GL) on top of the silicon nitride (SiN) passivation layer of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors has been systematically analyzed. Results showed that in the devices without the GL, the maximum drain current density (I-D,max)...
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| Format: | Article |
| Language: | English |
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Institute of Electrical and Electronics Engineers (IEEE),
2019-07-08T14:31:50Z.
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| Online Access: | Get fulltext |