MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈1¯100〉 by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1° and 4° miscut substrates...
| Main Authors: | , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Elsevier BV,
2019-07-09T16:52:57Z.
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| Subjects: | |
| Online Access: | Get fulltext |