GaN Nanowire n-MOSFET with 5 nm Channel Length for Applications in Digital Electronics
We study the performance of GaN nanowire n-MOSFETs (GaN-NW-nFETs) with a channel length, Lg = 5 nm based on fully ballistic quantum transport simulations. Our simulation results show high ION = 1137μA/μm and excellent on-off characteristics with Q = gm/SS = 188 μS-decade/μm-mV calculated for Ioff =...
| Main Authors: | , , |
|---|---|
| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2019-07-10T17:22:07Z.
|
| Subjects: | |
| Online Access: | Get fulltext |